GPD Optoelectronics was founded in 1973 as Germanium Power Devices Corp. producing high-quality germanium transistors, but since the early 1980s has established itself as a reliable manufacturer of gallium indium arsenide photodiodes and multi-element photodetectors.
GPD is committed to providing high quality products in a short time by collaborating with the customer. In addition to offering a range of standard products, they are specialized in providing customized products tailored to the application of interest.
Wafer design, testing and assembly are done in-house. The manufacturing facilities feature class 1,000 and 10,000 cleanrooms, as well as automated assembly and testing systems. GPD uses an inspection system compliant with MIL-I-45208. Photodiodes are subject to Telcordia testing requirements (TA-NWT-00093), MIL-STD-883 test methods, and/or customer specifications. GPD Optoelettronics is ISO 9001:2015 certified.
The current production is based on:
Avalanche Photodiodes - InGaAs APDs
Low Polarization-Dependent-Loss InGaAs Photodiodes
Here you can find all the technical data sheets
