Founded in 1973 as Germanium Power Devices Corp., GPD Optoelectronics has evolved from producing germanium transistors to becoming a trusted manufacturer of germanium and indium gallium arsenide (InGaAs) photodiodes and multi-element photodetectors.
With decades of experience, they expanded their technical expertise and production capacity, operating from a modern facility in Salem, New Hampshire. Guided by integrity and customer focus, GPD is committed to continuous improvement, reliable delivery, and exceptional service.
In addition to a wide range of standard products, they specialize in custom-designed components tailored to specific applications—often developing prototypes within just a few weeks.The in-house capabilities include wafer design and testing, precision machining, CNC and 3D printing, and advanced cleanroom facilities with hermetic sealing and automated assembly.
GPD’s inspection and testing meet MIL-I-45208, Telcordia (TA-NWT-00093), and MIL-STD-883 standards. They are ISO 9001:2015 certified, ensuring consistent quality and performance across all their products.
Germanium Photodiodes
Germanium photodiodes are widely used for measuring optical power in the near-infrared (NIR) range, particularly in cost-sensitive applications or those requiring large-area detectors. While they typically exhibit lower shunt resistance and higher dark current than InGaAs detectors—resulting in increased noise—they perform well in applications where signal levels significantly exceed the noise floor. GPD Optoelectronics’ “HS” series germanium photodiodes feature enhanced shunt resistance, providing improved performance compared to standard devices.
Key Features:
Active area diameters from 1 mm to 25 mm to accommodate various optical system designs
Broad spectral response from 800 nm to 1700 nm for versatile NIR detection
Excellent linearity exceeding 10 dBm for accurate and stable measurements
Custom optical options, including multiple lens and window configurations
Integrated optical filters available — neutral density, bandpass, and more
Optional thermoelectric cooling for improved performance and reduced dark current
Flexible packaging choices, including TO packages, BNC options, chip-on-ceramic submounts, and other custom formats
High Speed Indium Gallium Arsenide (InGaAs) Photodiodes
Indium gallium arsenide (InGaAs) photodiodes are widely used for detecting light in the near-infrared (NIR) spectrum. Compared to germanium detectors, InGaAs devices offer significantly higher shunt resistance and lower dark current, resulting in superior signal-to-noise performance. These characteristics make InGaAs photodiodes the ideal choice for highly sensitive measurements and other low-noise optical applications.
Key Features:
Designed for high-speed and high-sensitivity applications, our InGaAs photodiodes deliver exceptional performance and reliability across the near-infrared spectrum.
Active area diameters from 60 μm to 300 μm for precision detection and fast response
Spectral response spanning 850 nm to 1700 nm for versatile NIR applications
Low dark current ensuring high sensitivity and excellent signal-to-noise performance
Low capacitance for high-speed operation — up to 2.5 GHz depending on package
Flexible packaging options, including TO packages, fiber pigtails, chip-on-ceramic submounts, and more
InGaAs Photodiodes
Key Features:
Experience superior performance and flexibility with advanced photodiode technology, designed to meet the needs of demanding optical applications
Versatile active areas from 100 μm to 10,000 μm to suit a wide range of detection requirements
Broad spectral response from 850 nm to 1700 nm, with extended-range options up to 2.6 μm
Exceptional sensitivity thanks to high shunt resistance and low-noise performance
Customizable optics, including multiple lens and window configurations
Optional thermoelectric cooling for enhanced stability and reduced dark current in precision environments
Extended InGaAs Photodiodes
Key Features:
Designed for precision and versatility, the extended-range InGaAs photodiodes deliver exceptional performance across demanding near-infrared applications
Active area sizes from 0.3 mm to 3 mm to meet diverse design requirements
Extended cutoff wavelengths available at 1.9 μm, 2.05 μm, 2.2 μm, and 2.6 μm for enhanced spectral coverage
High shunt resistance ensuring superior sensitivity and low noise
Flexible optical configurations, with multiple window and lens options
Available in TO-46, TO-18, and TO-5 packages for easy system integration
Optional thermoelectric cooling for improved thermal stability and reduced dark current
InGaAs avalanche photodiodes
Indium Gallium Arsenide (InGaAs) avalanche photodiodes (APDs) are designed for applications requiring higher sensitivity than standard photodiodes can provide. Utilizing an internal gain mechanism based on impact ionization, these devices create an electron avalanche that amplifies weak optical signals for improved detection. APDs are ideal for low-signal applications such as LiDAR, optical communication, and other precision sensing systems.
Key Features:
Active area diameters from 80 μm to 350 μm to suit diverse optical configurations
Spectral response covering 900 nm to 1650 nm for consistent NIR performance
Excellent linearity ensuring accurate signal measurement across varying power levels
Low dark current for superior sensitivity and reduced noise
Low capacitance enabling high-speed operation and fast response times
Fiber pigtail options available in single-mode or multi-mode configurations
Flexible packaging, including TO packages and ceramic submounts with optional ball lens
InGaAs Quadrant Photodiodes
The standard InGaAs Quadrant Photodiode features four independent active regions integrated on a single detector. Each segment produces a current output proportional to the light’s position on the surface, enabling accurate determination of beam location and movement. This design is ideal for precision position sensing, beam alignment, and optical tracking applications.
Key Features:
Standard package options including TO-46, TO-5, and LCC
Spectral response from 800 nm to 1700 nm for broad NIR detection
Active area diameters of 0.5 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.0 mm, and 5.0 mm
High sensitivity and low crosstalk for precise signal separation
High shunt resistance and low dark current for superior signal-to-noise performance
Low capacitance enabling high segment bandwidth and fast response
Custom configurations available with tailored packaging, coatings, filters, and more
Double-quad configurations offered for advanced alignment and multi-beam applications
Tetralateral Position Sensors
The Germanium Position Sensing Photodetectors provide continuous position detection across a large active area, delivering accurate and stable performance in the near-infrared range. Designed for optical metrology, beam alignment, and precision positioning applications, these detectors offer reliable operation and excellent uniformity for demanding measurement environments.
Key Features:
Large active area up to 10 × 10 mm for continuous position sensing
Spectral response from 800 nm to 1700 nm for broad NIR compatibility
Tetralateral PSD configuration for accurate, stable position detection and linear output
Low Polarization-Dependent-Loss InGaAs Photodiodes
Key Features:
Area-independent design with active diameters from 0.3 mm to 10 mm
High sensitivity for accurate low-light detection
Cutoff wavelength at 1.7 μm (lattice-matched) for reliable NIR performance
Low polarization dependence ensuring consistent response under varying light conditions
Compatible with active device receptacles including FC, SC, ST, and SMA
Multi-Element Arrays
Key Features:
Spectral response from 800 nm to 1700 nm for broad NIR detection capability
Standard linear arrays available with 4, 8, 12, or 16 elements on a durable wraparound ceramic substrate
Element diameter of 80 μm with a 250 μm pitch ideal for fiber ribbon alignment
Custom array configurations available with user-defined element count, diameter, and pitch to meet specific design requirements
Two-Color Detectors
Two-color (sandwich) photodetectors are designed for applications that require an extended spectral range or precise remote temperature measurement. Each detector integrates two photodiodes—one mounted over the other—constructed from the same or different semiconductor materials to achieve complementary spectral responses.
A wide selection of standard and custom configurations is available, utilizing materials such as silicon, germanium, InGaAs, and extended-wavelength InGaAs, allowing tailored solutions for specialized measurement and sensing applications.
Key Features:
Extended spectral response for dual-wavelength and broadband detection
Large active area for efficient light collection and enhanced sensitivity
Low dark current ensuring excellent signal-to-noise performance and measurement stability
AVAILABLE FEATURES
